Faculté des sciences

Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering

Hofstetter, Daniel ; Zappe, H. P. ; Epler, J. E. ; Riel, P.

In: Applied Physics Letters, 1995, vol. 67, p. 1978-1980

Wavelength-shifted GaAs/AlGaAs Fabry–Pérot ridge waveguide lasers were fabricated by vacancy-enhanced quantum well disordering using dielectric cap annealing. 500 µm long and 4 µm wide Fabry–Pérot lasers with emission wavelengths selectively shifted by 20 nm were integrated with unshifted lasers on the same chip, characterized and further compared with lasers fabricated from... More

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    Summary
    Wavelength-shifted GaAs/AlGaAs Fabry–Pérot ridge waveguide lasers were fabricated by vacancy-enhanced quantum well disordering using dielectric cap annealing. 500 µm long and 4 µm wide Fabry–Pérot lasers with emission wavelengths selectively shifted by 20 nm were integrated with unshifted lasers on the same chip, characterized and further compared with lasers fabricated from as-grown material. These investigations showed that the absorption edge of a single-quantum well double heterostructure can be selectively blueshifted after epitaxial growth without compromising diode laser performance.