Faculté des sciences

Intersubband photoconductivity at 1.6 µm using a strain-compensated AlN/GaN superlattice

Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel ; Lu, H. ; Chen, X. ; Schaff, William J. ; Eastman, L. F. ; Golka, Sebastian ; Schrenk, W. ; Strasser, Gottfried

In: Applied Physics Letters, 2005, vol. 87, no. 191102, p. 1-3

We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular AlN/GaN superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poisson equation solver for our specific well width is in good agreement with the measurements. For a... More

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    Summary
    We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular AlN/GaN superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poisson equation solver for our specific well width is in good agreement with the measurements. For a well width of 17 Å, the transition energy between ground state and first excited state in the GaN well is around 6300 cm–1 which corresponds to 1.6 µm.