Faculté des sciences

Boron K-shell spectroscopy of boron-doped silicon

Esposto, F. J. ; Aebi, Philipp ; Tyliszczak, T. ; Hitchcock, A. P. ; Kasrai, M. ; Bozek, J. D. ; Jackman, T. E. ; Rolfe, S. R.

In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (JVST-A), 1991, vol. 9, no. 3, p. 1663-1669

The B K-edge spectra of various model compounds (BF3, KBF4, B2O3, B(OH)3, orthocarborane (B10H10C2H2) and elemental boron) were investigated to characterize the sensitivity of B K-edge spectra to local chemical environment. Electron yield detection of synchrotron photoabsorption at the... Plus

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    Summary
    The B K-edge spectra of various model compounds (BF3, KBF4, B2O3, B(OH)3, orthocarborane (B10H10C2H2) and elemental boron) were investigated to characterize the sensitivity of B K-edge spectra to local chemical environment. Electron yield detection of synchrotron photoabsorption at the boron K-edge was used to study the B sites in Si(B) epilayers grown by molecular beam epitaxy and in situ B doped from evaporated B2O3. Although there were interesting spectral variations with composition and annealing, comparison between the x-ray electron yield results and those from secondary ion mass spectroscopy and electrochemical capacitance voltage measurements indicate that the yield spectra are strongly influenced by surface segregation.