Faculté des sciences

Thermal stability of the [(Si) m/(Ge)n]p superlattice interface

Jackman, T. E. ; Baribeau, J.-M. ; Lockwood, D. J. ; Aebi, Philipp ; Tyliszczak, T. ; Hitchcock, A. P.

In: Physical Review B, 1992, vol. 45, no. 23, p. 13591-13594

The structure of [(Si) m/(Ge)n]p superlattice interfaces and the onset of relaxation and interdiffusion initiated by annealing have been investigated with the use of extended x-ray-absorption fine structure and Raman scattering. For the as-grown material, the Ge-Ge bond length (0.2409 nm) was equal to that calculated for a fully strained Ge... Plus

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    Summary
    The structure of [(Si) m/(Ge)n]p superlattice interfaces and the onset of relaxation and interdiffusion initiated by annealing have been investigated with the use of extended x-ray-absorption fine structure and Raman scattering. For the as-grown material, the Ge-Ge bond length (0.2409 nm) was equal to that calculated for a fully strained Ge layer (0.2412 nm) while the Si-Ge bond length was significantly shorter. The results show conclusively that substantial intermixing along with partial relaxation of the Ge-Ge bonds occurs even for the shortest anneal at 700 °C.