Faculté des sciences

Surface atomic structure of c (2×2)-Si on Cu(110)

Martín-Gago, J. A. ; Fasel, R. ; Hayoz, J. ; Agostino, R. G. ; Naumovic, D. ; Aebi, Philipp ; Schlapbach, Louis

In: Physical Review B, 1997, vol. 55, no. 19, p. 12896-12898

The technological importance of Schottky barriers has led to many experiments of metal-on-semiconductor systems. Here we present an example of the inverse case by depositing a semiconductor on a metal, studying the very early stages of the metal-semiconductor interface formation. We show that 0.5 monolayers of Si on Cu(110) form an ordered c (2×2) overlayer and resolve its geometrical... More

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    Summary
    The technological importance of Schottky barriers has led to many experiments of metal-on-semiconductor systems. Here we present an example of the inverse case by depositing a semiconductor on a metal, studying the very early stages of the metal-semiconductor interface formation. We show that 0.5 monolayers of Si on Cu(110) form an ordered c (2×2) overlayer and resolve its geometrical structure. Using full-hemispherical x-ray photoelectron diffraction, we find that Si atoms form an almost coplanar layer, replacing one out of two Cu surface atoms.