Faculté des sciences

Structural investigations of epitaxial InN by x-ray photoelectron diffraction and x-ray diffraction

Hofstetter, Daniel ; Despont, Laurent ; Garnier, Michael Bernard Gunnar ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Aebi, Philipp ; Kirste, Lutz ; Lu, Hai ; Schaff, William J.

In: Applied Physics Letters, 2007, vol. 90, no. 191912, p. 1-3

The authors investigated a 1 µm thick molecular beam epitaxy–grown InN film by means of full hemispherical x-ray photoelectron diffraction and high resolution x-ray diffraction. While x-ray diffraction reveals that this nominally hexagonal InN layer contains roughly 1% of cubic phase InN, a comparison between measured and simulated x-ray photoelectron diffraction data allowed them to... Plus

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    Summary
    The authors investigated a 1 µm thick molecular beam epitaxy–grown InN film by means of full hemispherical x-ray photoelectron diffraction and high resolution x-ray diffraction. While x-ray diffraction reveals that this nominally hexagonal InN layer contains roughly 1% of cubic phase InN, a comparison between measured and simulated x-ray photoelectron diffraction data allowed them to directly determine the polarity of the crystal. Furthermore, the data indicate that the InN surface consists of a mosaic of domains oriented at an azimuth of 180° to each other, where the azimuth corresponds to the rotation angle around the [0001] axis.