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X-ray photoelectron diffraction of (100)-oriented chemical vapor deposited diamond films on silicon (100)

Schaller, E. ; Küttel, O. M. ; Aebi, Philipp ; Schlapbach, Louis

In: Applied Physics Letters, 1995, vol. 67, no. 11, p. 1533-1534

(100)-oriented diamond films have been grown on silicon (100) in a microwave plasma assisted chemical vapor deposition (CVD) tubular system. X-ray photoelectron diffraction (XPD) has been used to study such oriented polycrystalline films. Comparing the diffractograms of a natural diamond (100) surface and of polycrystalline (100)-oriented CVD diamond films quite similar features are observed. XPD... More

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    Title
    • X-ray photoelectron diffraction of (100)-oriented chemical vapor deposited diamond films on silicon (100)
    Author
    • Schaller, E.. Institut de physique, Université de Fribourg, Switzerland
    • Küttel, O. M.. Institut de physique, Université de Fribourg, Switzerland
    • Aebi, Philipp. Institut de Physique, Université de Neuchâtel, Switzerland
    • Schlapbach, Louis. Institut de physique, Université de Fribourg, Switzerland
    Document Type
    • Postprint
    Publication Date
    • 1995
    Language
    • English
    Published in
    • Applied Physics Letters, 1995, vol. 67, no. 11, p. 1533-1534. American Institute of Physics (AIP)
    Other Version
    Classification
    • Physics
    OAI-PMH Identifier
    • oai:doc.rero.ch:20080311121851-HY
    Submission No.
    • 20080311121851-HY
    Summary
    (100)-oriented diamond films have been grown on silicon (100) in a microwave plasma assisted chemical vapor deposition (CVD) tubular system. X-ray photoelectron diffraction (XPD) has been used to study such oriented polycrystalline films. Comparing the diffractograms of a natural diamond (100) surface and of polycrystalline (100)-oriented CVD diamond films quite similar features are observed. XPD measurements after 8 min of bias treatment show that the tiny crystals are already preferentially oriented at deposition parameters required for (100)-oriented film growth. Our measurements indicate a strong need to control the growth parameters very carefully during the first minutes of growth to get an orientation.