Faculté des sciences
Texte intégral

X-ray absorption fine structure studies of buried Ge-Si interfaces

Aebi, Philipp ; Tyliszczak, T. ; Hitchcock, A. P. ; Jackman, T. E. ; Baribeau, J.-M.

In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991, vol. 9, no. 3, p. 907-911

We have used Ge A-edge x-ray absorption fine structure (EXAFS) and a gas ionization detector with sample rotation to study the local environment of nominally pure Qe layers buried in single crystal Si. The samples were grown by molecular-beam epitaxy on Si( 100). The dependence on thickness, number of Ge layers and growth temperature is explored. Considerable sensitivity to the quality of the... More

Add to personal list
    Title
    • X-ray absorption fine structure studies of buried Ge-Si interfaces
    Author
    • Aebi, Philipp. Institut de Physique, Université de Neuchâtel, Switzerland
    • Tyliszczak, T.. Institute for Materials Research and Ontario Centre for Materials Research, McMaster University, Hamilton, Canada
    • Hitchcock, A. P.. Institute for Materials Research and Ontario Centre for Materials Research, McMaster University, Hamilton, Canada
    • Jackman, T. E.. Institute for Microstructural Sciences, National Research Council, Ottawa, Canada
    • Baribeau, J.-M.. Institute for Microstructural Sciences, National Research Council, Ottawa, Canada
    Document Type
    • Postprint
    Publication Date
    • 1991
    Language
    • English
    Published in
    • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991, vol. 9, no. 3, p. 907-911. American Vacuum Society
    Other Version
    Classification
    • Physics
    OAI-PMH Identifier
    • oai:doc.rero.ch:20080305185046-VQ
    Submission No.
    • 20080305185046-VQ
    Summary
    We have used Ge A-edge x-ray absorption fine structure (EXAFS) and a gas ionization detector with sample rotation to study the local environment of nominally pure Qe layers buried in single crystal Si. The samples were grown by molecular-beam epitaxy on Si( 100). The dependence on thickness, number of Ge layers and growth temperature is explored. Considerable sensitivity to the quality of the epitaxial growth is observed. For instance the degree of mixing of the Si and Ge layers is a function of the growth temperature. A weak polarization dependence of the Ge K-edge. EXAFS is observed. The initial quantitative analysis provides estimates of intermixing in the thinnest layers which are compatible with results of complementary Raman measurements.