Faculté des sciences

High-resolution study of x-ray resonant Raman scattering at the k edge of silicon

Szlachetko, Jakub ; Dousse, Jean-Claude ; Hoszowska, J. ; Pajek, M. ; Barrett, R. ; Berset, Michel ; Fennane, Karima ; Kubala-Kukus, A. ; Szlachetko, Monika

In: Physical Review Letters, 2006, vol. 97, p. 073001

We report on the first high-resolution measurements of the K x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1s absorption edge and the... More

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    Summary
    We report on the first high-resolution measurements of the K x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1s absorption edge and the 1s-3p excitation were derived. The Kramers-Heisenberg formalism was found to reproduce quite well the x-ray RRS spectra, which is of prime importance for applications of the total-reflection x-ray fluorescence technique.