High-resolution study of x-ray resonant Raman scattering at the k edge of silicon

In: Physical Review Letters, 2006, vol. 97, p. 073001

We report on the first high-resolution measurements of the K x-ray resonant Raman scattering (RRS) in Si. The measured x-ray RRS spectra, interpreted using the Kramers-Heisenberg approach, revealed spectral features corresponding to electronic excitations to the conduction and valence bands in silicon. The total cross sections for the x-ray RRS at the 1s absorption edge and the ... More