Faculté des sciences

Importance of spin-orbit interaction for the electron spin relaxation in organic semiconductors

Nuccio, L. ; Willis, M. ; Schulz, Leander ; Fratini, S. ; Messina, F. ; D’Amico, M. ; Pratt, F. L. ; Lord, J. S. ; McKenzie, I. ; Loth, M. ; Purushothaman, B. ; Anthony, J. ; Heeney, M. ; Wilson, R. M. ; Hernández, I. ; Cannas, M. ; Sedlak, K. ; Kreouzis, T. ; Gillin, W. P. ; Bernhard, Christian ; Drew, Alan J.

In: Physical Review Letters, 2013, vol. 110, no. 21, p. 216602

Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence... Plus

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    Summary
    Despite the great interest organic spintronics has recently attracted, there is only a partial understanding of the fundamental physics behind electron spin relaxation in organic semiconductors. Mechanisms based on hyperfine interaction have been demonstrated, but the role of the spin-orbit interaction remains elusive. Here, we report muon spin spectroscopy and time-resolved photoluminescence measurements on two series of molecular semiconductors in which the strength of the spin-orbit interaction has been systematically modified with a targeted chemical substitution of different atoms at a particular molecular site. We find that the spin-orbit interaction is a significant source of electron spin relaxation in these materials.