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Optical characterization of semiconductor saturable absorbers

Haiml, M. ; Grange, R. ; Keller, U.

In: Applied Physics B, 2004, vol. 79, no. 3, p. 331-339

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    Titre
    • Optical characterization of semiconductor saturable absorbers
    Auteur
    • Haiml, M.. Swiss Federal Institute of Technology (ETH) Physics Department/Institute of Quantum Electronics, ETH Zurich Hoenggerberg HPT, 8093, Zurich, Switzerland
    • Grange, R.. Swiss Federal Institute of Technology (ETH) Physics Department/Institute of Quantum Electronics, ETH Zurich Hoenggerberg HPT, 8093, Zurich, Switzerland
    • Keller, U.. Swiss Federal Institute of Technology (ETH) Physics Department/Institute of Quantum Electronics, ETH Zurich Hoenggerberg HPT, 8093, Zurich, Switzerland
    Type de document
    • Postprint
    Langue
    • Anglais
    Publié dans
    • Applied Physics B, 2004, vol. 79, no. 3, p. 331-339. Springer Berlin Heidelberg; www.springer.de
    Autre version électronique
    Classification
    • Physique
    Identifiant OAI-PMH
    • oai:doc.rero.ch:321418
    Summary
    Semiconductor saturable absorber mirror (SESAM) devices have become a key component of ultrafast passive mode-locked laser sources. Here we describe in more detail how the key SESAM parameters such as saturation fluence, modulation depth, and nonsaturable losses are measured with a high accuracy. These parameters need to be known and controlled to obtain stable pulse generation for a given laser. A high-precision, wide dynamic range setup is required to measure this nonlinear reflectivity of saturable absorbers. The challenge to measure a low modulation depth and key measures necessary to obtain an accurate calibration are described in detail. The model function for the nonlinear reflectivity is based on a simple two-level travelling wave system. We include spatial beam profiles, nonsaturable losses and higher-order absorption, such as two-photon absorption and other induced absorption. Guidelines to extract the key parameters from the measured data are given