Faculté des sciences

Depth profiling of dopants implanted in Si using the synchrotron radiation based high-resolution grazing emission technique

Kayser, Yves ; Banaś, D. ; Cao, Wei ; Dousse, Jean-Claude ; Hoszowska, Joanna ; Jagodziński, P. ; Kavčič, Matjaz ; Kubala-Kukuś, A. ; Nowak, S. ; Pajek, M. ; Szlachetko, Jakoub

In: X-Ray Spectrometry, 2012, vol. 41, no. 2, p. 98–104

We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown... Plus

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    Summary
    We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions.