Faculté des sciences

Latest developments in GaN-based quantum devices for infrared optoelectronics

Monroy, Eva ; Guillot, Fabien ; Leconte, Sylvain ; Nevou, Laurent ; Doyennette, Laeticia ; Tchernycheva, Maria ; Julien, François H. ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Hofstetter, Daniel

In: Journal of Materials Science : Materials in Electronics, 2008, vol. 19, no. 8-9, p. 821-827

In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical... Plus

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    Summary
    In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical modulators operating at 1.55 μm. Finally, we discuss the progress towards intersubband light emitters, including the first experimental observation of intersubband photoluminescence in nitride nanostructures.