Faculté des sciences

Photodetectors based on intersubband transitions using III-nitride superlattice structures

Hofstetter, Daniel ; Baumann, Esther ; Giorgetta, Fabrizio R. ; Théron, Ricardo ; Wu, Hong ; Schaff, William J. ; Dawlaty, Jahan ; George, Paul A. ; Eastman, Lester F. ; Rana, Farhan ; Kandaswamy, Prem K. ; Leconte, Sylvain ; Monroy, Eva

In: Journal of Physics: Condensed Matter, 2009, vol. 21, no. 17, p. 174208 1-12

We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz using... Plus

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    Summary
    We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz using a directly modulated semiconductor laser and up to 13.3 GHz using an ultra-short pulse solid state laser.