Faculté des sciences

High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation

Wittwer, Valentin J ; Mangold, Mario ; Hoffmann, Martin ; Sieber, Oliver D ; Golling, Matthias ; Südmeyer, Thomas ; Keller, Ursula

In: Electronic Letters, 2012, vol. 48, no. 18, p. 1144-1145

Presented is an optically pumped modelocked integrated externalcavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum... More

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    Summary
    Presented is an optically pumped modelocked integrated externalcavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum dots (QD) and the gain is obtained with seven InGaAs quantum wells. It is shown that the picosecond pulse duration is limited by the slow recovery time of the integrated QD saturable absorber.