Faculté des sciences

Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

Kayser, Yves ; Banaś, D. ; Cao, Wei ; Dousse, Jean-Claude ; Hoszowska, Joanna ; Jagodziński, P. ; Kavčič, Matjaz ; Kubala-Kukuś, A. ; Nowak, S. ; Pajek, M. ; Szlachetko, Jakub

In: Spectrochimica Acta Part B: Atomic Spectroscopy, 2010, p. -

The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10¹⁶ atoms/cm² in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-Kα X-ray fluorescence line with... Plus

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    Summary
    The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10¹⁶ atoms/cm² in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-Kα X-ray fluorescence line with nanometer-scale precision. The experimental results were compared to theoretical predictions of the depth distributions resulting from ion implantation. A good agreement between experiment and theory was found which proved that the presented high-resolution grazing emission X-ray fluorescence technique is well suited to perform depth profiling measurements of impurities located within the extinction depth, provided the overall shape of the distribution can be assumed a priori.