Faculté des sciences

Application of the high-resolution grazing-emission x-ray fluorescence method for impurities control in semiconductor nanotechnology

Szlachetko, Jakub ; Banaś, D. ; Kubala-Kukuś, A. ; Pajek, M. ; Cao, Wei ; Dousse, Jean-Claude ; Hoszowska, Joanna ; Kayser, Yves ; Szlachetko, Monika ; Kavčič, M. ; Salome, M. ; Susini, J.

In: Journal of Applied Physics, 2009, vol. 105, p. 086101

We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹² atoms/cm². The latter can be presumably further improved down to 10⁷ atoms/cm² by combining the synchrotron... Plus

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    Summary
    We report on the application of synchrotron radiation based high-resolution grazing-emission x-ray fluorescence (GEXRF) method to measure low-level impurities on silicon wafers. The presented high-resolution GEXRF technique leads to direct detection limits of about 10¹²  atoms/cm². The latter can be presumably further improved down to 10⁷  atoms/cm² by combining the synchrotron radiation-based GEXRF method with the vapor phase decomposition preconcentration technique. The capability of the high-resolution GEXRF method to perform surface-sensitive elemental mappings with a lateral resolution of several tens of micrometers was probed.