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SONAR|HES-SO

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Texte intégral
Bachelor thesis

Flux growth of ZnO microcrystals and growth of doped homoepitaxial ZnO films by liquid phase epitaxy

    2007

Mémoire de diplôme HES: Haute Ecole d'Ingénierie, 2007

crystal growth
optical properties of materials, measurement of optical properties of materials (materials science)
optoelectronics + photoelectronics
oxyde de zinc (chimie inorganique)
wide band gap semiconductors, wbs (semiconductor technology)
English Zinc oxide is known as an outstanding material with desirable properties and a wide application range in optoelectronics, transparent electronics, etc. An increasingly important aspect is the fabrication of materials like ZnO by technologies which not only guarantee reproducibly high quality, but also facilitate one-step fabrication of the functional materials with a minimum effort in producing them by so-called green technologies. Moreover, mechanically untouched ZnO surfaces are desirable to exclude radiative losses due to a damaged surface layer. As the doping of hydrothermal grown bulk ZnO appears rather difficult and time consuming, LPE was employed to obtain high-quality single crystal films of several micrometer thickness. With the LPE growth technique the damaged surface layer is neutralized, at the same time doping can be realized and the sample surface is mechanically untouched. LPE is an advancement of the flux growth. Before growing films by LPE several flux experiments were done. Homoepitaxial ZnO films and microcrystals were grown from a LiCl solution at 640°C under ambient air conditions. ZnO is produced by a reaction of ZnCl2 with K2CO3, such way providing the feeding for continous growth. Doping and formation of solid solutions with ions such like Bi, Sb, Mo, and In was enabled through employment of the relevant pure metal, metal halogenide or metal oxide. The crystal quality has been investigated by SEM, EDX, XRD, DIC and PL.
Language
  • English
Classification
Engineering materials
Notes
  • Lieu d'exécution: Tohoku University, Sendai, Japan
  • Haute Ecole d'Ingénierie Valais
  • Systèmes industriels - Systemtechnik
  • Design & Materials
  • hesso:heivs
License
License undefined
Identifiers
  • RERO DOC 10798
Persistent URL
https://sonar.ch/hesso/documents/317356
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