Faculté des sciences

Saturation behavior of the light-induced defect density inhydrogenated amorphous silicon [solar cells]

Park, H.R. ; Liu, J.Z. ; Roca i Cabarrocas, P. ; Maruyama, A. ; Isomura, M. ; Wagner, S. ; Abelson, J.R. ; Finger, F.

In: Conference Record of the 21th IEEE Photovoltaic Specialists Conference, 1990, vol. 2, p. 1642-1647

The light-induced generation of defects in a-Si:H(F) was saturated by a few hours of illumination with Kr-ion-laser light soaking (λ=647.1 nm) near room temperature. The time to reach saturation scales roughly with 1/G2, but the saturation value is essentially independent of the illumination intensity. Therefore, the saturation is not due to thermal annealing. The saturation values of the... Plus

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    Summary
    The light-induced generation of defects in a-Si:H(F) was saturated by a few hours of illumination with Kr-ion-laser light soaking (λ=647.1 nm) near room temperature. The time to reach saturation scales roughly with 1/G2, but the saturation value is essentially independent of the illumination intensity. Therefore, the saturation is not due to thermal annealing. The saturation values of the light-induced defect density in 37 a-Si:H(F) samples which had been grown in six different reactors over a range of conditions were measured. These a-Si:H(F) samples have annealed-state defect densities in the range of 1.1×1015 to 1.6×1016 cm-3, Urbach energies of 42-62 meV, and Tauc optical bandgaps of 1.61 to 1.83 eV. The saturation value rises from 5×1016 to 2×1017 cm-3 with increasing optical gap and total hydrogen content, but it is not correlated with the Urbach energy or with the annealed-state defect density.