Faculté des sciences

a-Si:H films deposited at high rates in a 'VHF' silane plasma: potential for low-cost solar cells

Shah, Arvind ; Sauvain, E. ; Wyrsch, Nicolas ; Curtins, H. ; Leutz, B. ; Shen, D. S. ; Chu, V. ; Wagner, S. ; Schade, H. ; Chao, H. W. A.

In: Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference, 1988, vol. 1, p. 282-287

The very-high-frequency glow discharge (VHF-GD) is a high-rate deposition method for amorphous silicon based on the use of plasma excitation frequencies in the range 30-150 MHz. Thereby the high-energy tail of the electron energy density function is enhanced, increasing the deposition rate R, without a corresponding increase in electric field and ion bombardment. Here, an extensive set of... Plus

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    Summary
    The very-high-frequency glow discharge (VHF-GD) is a high-rate deposition method for amorphous silicon based on the use of plasma excitation frequencies in the range 30-150 MHz. Thereby the high-energy tail of the electron energy density function is enhanced, increasing the deposition rate R, without a corresponding increase in electric field and ion bombardment. Here, an extensive set of optoelectronic properties (σdark, Ea, σph, CPM, PDS, TOF, SSPG, steady-state Hecht plot) is presented for samples prepared by VHF-GD for the above frequency range and R≈12-15 AA/s. Emphasized are hole transport properties. With values of (μDτt)h by TOF (time of flight) around 3*10-10 but up to ≈5*10-9 cm2V-1, VHF-GD is judged to be adequate for solar-cell applications.