Faculté des sciences

Microcrystalline p–i–n cells: a drift-controlled device?

Wyrsch, Nicolas ; Torres, Pedro ; Meier, Johannes ; Shah, Arvind

In: Journal of Non-Crystalline Solids, 1998, vol. 227-230, p. 1272-1276

The objective of this paper is to get more insight into the physics of microcrystalline silicon based solar cell by studying electric field profiles, spectral responses and current–voltage characteristics. Based on a comparison with a-Si:H p–i–n and c-Si p–n diodes, we concluded that μc-Si:H p–i–n devices are not field-controlled despite the presence of a high electric field... Plus

Ajouter à la liste personnelle
    Summary
    The objective of this paper is to get more insight into the physics of microcrystalline silicon based solar cell by studying electric field profiles, spectral responses and current–voltage characteristics. Based on a comparison with a-Si:H p–i–n and c-Si p–n diodes, we concluded that μc-Si:H p–i–n devices are not field-controlled despite the presence of a high electric field in the i-layer.