Faculté des sciences

Electron spin resonance and optical characterization of defects in microcrystalline silicon

Vaněček, Milan ; Poruba, A. ; Remeš, Z. ; Rosa, J. ; Kamba, S. ; Vorlíček, S. ; Meier, Johannes ; Shah, Arvind

In: Journal of Non-Crystalline Solids, 2000, vol. 266-269, p. 519-523

Electron spin resonance (ESR), constant photocurrent method (CPM), photothermal deflection spectroscopy (PDS), Raman and IR spectroscopy have been used to measure microcrystalline silicon films. Besides standard defects with a g-value of 2.0055, new defects with a g-value ~2.0030 have been created during annealing this material. Proportionality between the subgap optical absorption... Plus

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    Summary
    Electron spin resonance (ESR), constant photocurrent method (CPM), photothermal deflection spectroscopy (PDS), Raman and IR spectroscopy have been used to measure microcrystalline silicon films. Besides standard defects with a g-value of 2.0055, new defects with a g-value ~2.0030 have been created during annealing this material. Proportionality between the subgap optical absorption and ESR spin density has been observed.